| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPG20N04S409ATMA1
MOSFET N-CHANNEL_30/40V
Infineon Technologies
|
1,733 | 1.51000 | Active | 2 N-Channel (Dual) | Standard | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | 2250pF @ 25V | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | Details |
|
ZXMN3A06DN8TA
MOSFET 2N-CH 30V 4.9A 8-SOIC
Diodes Incorporated
|
7,395 | 1.26000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 35mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | 796pF @ 25V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
IRLHS6276TRPBF
MOSFET 2N-CH 20V 4.5A PQFN
Infineon Technologies
|
2,232 | 0.81000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 6-PQFN (2x2) | Details |
|
SLA5068
MOSFET 6N-CH 60V 7A 15-SIP
Sanken
|
413 | 6.31000 | Active | 6 N-Channel (3-Phase Bridge) | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP | Details |
|
FDMS3602AS
SMALL SIGNAL FIELD-EFFECT TRANSI
Fairchild Semiconductor
|
14,975 | 0.94000 | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 25V | 15A, 26A | 5.6mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 10V | 1770pF @ 13V | 2.2W, 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | Details |
|
DMP2040UND-7
MOSFET BVDSS: 8V~24V POWERDI3333
Diodes Incorporated
|
5,914 | 0.21940 | Active | 2 P-Channel (Dual) | Standard | 20V | 5.3A (Ta), 13.6A (Tc) | 36mOhm @ 8.9A, 4.5V | 1.5V @ 250µA | 20nC @ 10V | 834pF @ 10V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXB) | Details |
|
PSMN4R2-40VSHX
PSMN4R2-40VSH - DUAL N-CHANNEL 4
Nexperia USA Inc.
|
2,179 | 3.04000 | Active | 2 N-Channel (Half Bridge) | Standard | 40V | 98A (Ta) | 4.2mOhm @ 20A, 10V | 3.6V @ 1mA | 37nC @ 10V | 2590pF @ 25V | 85W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
RF1S40N10LE
40A, 100V, 0.04OHM, N-CHANNEL,
Harris Corporation
|
1,368 | 1.31000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTJD5121NT1G
MOSFET 2N-CH 60V 295MA SOT363
onsemi
|
13,316 | 0.38000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 295mA | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | 26pF @ 20V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | Details |
|
SI7216DN-T1-E3
MOSFET 2N-CH 40V 6A 1212-8
Vishay Siliconix
|
7,358 | 1.74000 | Active | 2 N-Channel (Dual) | Standard | 40V | 6A | 32mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | 670pF @ 20V | 20.8W | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
HAT2043R-EL-E
8A, 30V, N-CHANNEL MOSFET
Renesas Electronics America Inc
|
2,267 | 1.11000 | Active | 2 N-Channel (Dual) | Logic Level Gate, 4V Drive | 30V | 8A (Ta) | 22mOhm @ 4A, 10V | 2.5V @ 1mA | 32nC @ 10V | 1170pF @ 10V | 3W (Ta) | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
SI1553CDL-T1-GE3
MOSFET N/P-CH 20V SC70-6
Vishay Siliconix
|
7,386 | 0.52000 | Active | N and P-Channel | Logic Level Gate | 20V | 700mA, 500mA | 390mOhm @ 700mA, 4.5V | 1.5V @ 250µA | 1.8nC @ 10V | 38pF @ 10V | 340mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | Details |
|
IPP120N04S3-02
PFET, 120A I(D), 40V, 0.0023OHM,
Infineon Technologies
|
31,107 | 2.95000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DF23MR12W1M1PB11BPSA1
MOSFET MODULE 1200V
Infineon Technologies
|
26 | 113.86000 | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B-2 | Details |
|
DMG8601UFG-7
MOSFET 2N-CH 20V 6.1A DFN
Diodes Incorporated
|
9,917 | 0.63000 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6.1A | 23mOhm @ 6.5A, 4.5V | 1.05V @ 250µA | 8.8nC @ 4.5V | 143pF @ 10V | 920mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerUDFN | U-DFN3030-8 | Details |
|
SPA20N60CFD
POWER FIELD-EFFECT TRANSISTOR, 2
Infineon Technologies
|
111 | 3.06000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMC3060LVTQ-13
MOSFET BVDSS: 25V~30V TSOT26 T&R
Diodes Incorporated
|
7,490 | 0.14720 | Active | N and P-Channel | Standard | 30V | 3.6A (Ta), 2.8A (Ta) | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V | 1.8V @ 250µA, 2.1V @ 250µA | 11.3nC @ 10V, 8.6nC @ 10V | 395pF @ 15V, 324pF @ 15V | 830mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
PAA12400BM3
1200V HALF-BRIDGE
PN Junction Semiconductor
|
3,908 | 882.36000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 350A | 7.3mOhm @ 300A, 20V | 5V @ 100mA | - | 29.5pF @ 1000V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module | Details |
|
DMC3028LSDX-13
MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Diodes Incorporated
|
4,959 | 0.25970 | Active | N and P-Channel | Logic Level Gate | 30V | 5.5A, 5.8A | 27mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
SI7900AEDN-T1-E3
MOSFET 2N-CH 20V 6A 1212-8
Vishay Siliconix
|
50,447 | 1.78000 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26mOhm @ 8.5A, 4.5V | 900mV @ 250µA | 16nC @ 4.5V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
ALD110902SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
|
25 | 4.84000 | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMN32D4SDW-7
MOSFET 2N-CH 30V 0.65A SOT363
Diodes Incorporated
|
4,477 | 0.50000 | Active | 2 N-Channel (Dual) | Standard | 30V | 650mA | 400mOhm @ 250mA, 10V | 1.6V @ 250µA | 1.3nC @ 10V | 50pF @ 15V | 290mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
FDMS9620S
MOSFET 2N-CH 30V 8MLP PWR56
onsemi
|
5,598 | 1.27000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A, 10A | 21.5mOhm @ 7.5A, 10V | 3V @ 250µA | 14nC @ 10V | 665pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (5x6), Power56 | Details |
|
IRF7343TRPBF
MOSFET N/P-CH 55V 8-SOIC
Infineon Technologies
|
79,045 | 1.32000 | Active | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
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