| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AONY36352
MOSFET 2N-CH 30V 8DFN
Alpha & Omega Semiconductor Inc.
|
3,857 | 1.31000 | Active | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) | 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 20nC @ 10V, 52nC @ 10V | 820pF @ 15V, 2555pF @ 15V | 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | Details |
|
2N7002VC-7
MOSFET 2N-CH 60V 0.28A SOT-563
Diodes Incorporated
|
6,511 | 0.44000 | Active | 2 N-Channel (Dual) | Standard | 60V | 280mA | 7.5Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
DMP6050SSD-13
MOSFET 2P-CH 60V 4.8A 8-SO
Diodes Incorporated
|
3,541 | 0.91000 | Active | 2 P-Channel (Dual) | Standard | 60V | 4.8A | 55mOhm @ 5A, 10V | 3V @ 250µA | 24nC @ 10V | 1293pF @ 30V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
ZXMN3G32DN8TA
MOSFET 2N-CH 30V 5.5A 8SOIC
Diodes Incorporated
|
9 | 0.91000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 28mOhm @ 6A, 10V | 3V @ 250µA | 10.5nC @ 10V | 472pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMC1229UFDB-13
MOSFET N/P-CH 12V U-DFN2020-6
Diodes Incorporated
|
3,576 | 0.16350 | Active | N and P-Channel | Logic Level Gate | 12V | 5.6A, 3.8A | 29mOhm @ 5A, 4.5V | 1V @ 250µA | 19.6nC @ 8V | 914pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
ALD110808PCL
MOSFET 4N-CH 10.6V 16DIP
Advanced Linear Devices Inc.
|
1,334 | 5.71720 | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | Details |
|
CAB016M12FM3
MOSFET 2 N-CH 1.2KV 78A MODULE
Wolfspeed, Inc.
|
40 | 142.08000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 78A | 21.3mOhm @ 80A, 15V | 3.6V @ 23mA | 236nC @ 15V | 6.6nF @ 800V | 10mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - | Details |
|
SI4931DY-T1-GE3
MOSFET 2P-CH 12V 6.7A 8SOIC
Vishay Siliconix
|
5,250 | 1.29000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 12V | 6.7A | 18mOhm @ 8.9A, 4.5V | 1V @ 350µA | 52nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
ALD210804PCL
MOSFET 4N-CH 10.6V 0.08A 16DIP
Advanced Linear Devices Inc.
|
3,555 | 6.08840 | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | Details |
|
BUK9K12-60EX
MOSFET 2N-CH 60V 35A 56LFPAK
Nexperia USA Inc.
|
4,885 | 1.79000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 35A | 10.7mOhm @ 15A, 10V | 2.1V @ 1mA | 24.5nC @ 5V | 3470pF @ 25V | 68W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
NTJD4105CT1G
MOSFET N/P-CH 20V/8V SOT-363
onsemi
|
2,663 | 0.46000 | Active | N and P-Channel | Logic Level Gate | 20V, 8V | 630mA, 775mA | 375mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | Details |
|
AOE6930
MOSFET 2 N-CH 30V 22A/85A 8DFN
Alpha & Omega Semiconductor Inc.
|
4,265 | 1.08000 | Active | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 22A (Tc), 85A (Tc) | 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 15nC @ 4.5V, 65nC @ 4.5V | 1075pF @ 15V, 5560pF @ 15V | 24W, 75W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) | Details |
|
SSM6L56FE,LM
SMALL-SIGNAL MOSFET 2 IN 1 NCH +
Toshiba Semiconductor and Storage
|
2,290 | 0.39000 | Active | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 800mA (Ta) | 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 10V | 55pF @ 10V, 100pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | Details |
|
SI1967DH-T1-E3
MOSFET 2P-CH 20V 1.3A SC70-6
Vishay Siliconix
|
7,973 | 0.43000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.3A | 490mOhm @ 910mA, 4.5V | 1V @ 250µA | 4nC @ 8V | 110pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | Details |
|
ZXMP6A16DN8TA
MOSFET 2P-CH 60V 2.9A 8-SOIC
Diodes Incorporated
|
1,702 | 0.72420 | Active | 2 P-Channel (Dual) | Standard | 60V | 3.9A (Ta) | 85mOhm @ 2.9A, 10V | 1V @ 250µA | 12.1nC @ 5V | 1021pF @ 30V | 2.15W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
NX6020CAKSX
MOSFET N/P-CH 60/50V 170MA TSSOP
Nexperia USA Inc.
|
7,344 | 0.06200 | Active | N and P-Channel | Standard | 60V, 50V | 170mA (Ta) | 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V, 0.35nC @ 5V | 17pF @ 10V, 36pF @ 25V | 330mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | Details |
|
SI4804CDY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOIC
Vishay Siliconix
|
6,306 | 0.78000 | Active | 2 N-Channel (Dual) | Standard | 30V | 8A | 22mOhm @ 7.5A, 10V | 2.4V @ 250µA | 23nC @ 10V | 865pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SQJ946EP-T1_GE3
MOSFET 2 N-CH 40V POWERPAK SO8
Vishay Siliconix
|
7,148 | 0.96000 | Active | 2 N-Channel (Dual) | Standard | 40V | 15A (Tc) | 33mOhm @ 7A, 10V | 2.5V @ 250µA | 20nC @ 10V | 600pF @ 25V | 27W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
EMH2402-TL-E
N-CHANNEL SILICON MOSFET
Sanyo
|
9,000 | 0.22000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PJS6835_S2_00001
20V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
5,211 | 0.49000 | Active | 2 P-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 500mA (Ta) | 1.2Ohm @ 500mA, 4.5V | 1V @ 250µA | 1.4nC @ 4.5V | 38pF @ 10V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
FQS4900TF
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
|
36,948 | 0.54000 | Active | N and P-Channel | Standard | 60V, 300V | 1.3A, 300mA | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SIA910EDJ-T1-GE3
MOSFET 2N-CH 12V 4.5A SC-70-6
Vishay Siliconix
|
8,776 | 0.62000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 12V | 4.5A | 28mOhm @ 5.2A, 4.5V | 1V @ 250µA | 16nC @ 8V | 455pF @ 6V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | Details |
|
APTM100A13SCG
MOSFET 2N-CH 1000V 65A SP6
Microchip Technology
|
7,770 | 362.19250 | Active | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | Details |
|
ALD210800APCL
MOSFET 4N-CH 10.6V 0.08A 16DIP
Advanced Linear Devices Inc.
|
36 | 8.43000 | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | Details |
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