SIA910EDJ-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIA910EDJ-T1-GE3 Vishay Siliconix
SIA910EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 4.5A SC-70-6

SIA910EDJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 12V 4.5A SC-70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 7.8W.

In Stock: 8,776

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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