| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUK9230-55A/C1118
N-CHANNEL POWER MOSFET
NXP USA Inc.
|
31,793 | 0.27000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
TPH2R408QM,L1Q
MOSFET N-CH 80V 120A 8SOP
Toshiba Semiconductor and Storage
|
9,790 | 1.91000 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.43mOhm @ 50A, 10V | 3.5V @ 1mA | 87 nC @ 10 V | ±20V | 8300 pF @ 40 V | - | 3W (Ta), 210W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN | Details |
|
DMT6016LFDF-7
MOSFET N-CH 60V 8.9A 6UDFN
Diodes Incorporated
|
5,870 | 0.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.9A (Ta) | 4.5V, 10V | 16mOhm @ 10A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 864 pF @ 30 V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad | Details |
|
AOI1R4A70
MOSFET N-CH 700V 3.8A TO251A
Alpha & Omega Semiconductor Inc.
|
2,357 | 0.51740 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 3.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.1V @ 250µA | 8 nC @ 10 V | ±20V | 354 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak | Details |
|
CSD18511KTT
MOSFET N-CH 40V 194A DDPAK
Texas Instruments
|
8,451 | 1.14340 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 194A (Ta) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.4V @ 250µA | 64 nC @ 10 V | ±20V | 5940 pF @ 20 V | - | 188W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
AUIRFS8407-7P
MOSFET N-CH 40V 240A D2PAK-7
Infineon Technologies
|
6,753 | 5.76000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Details |
|
SQM25N15-52_GE3
MOSFET N-CH 150V 25A TO263
Vishay Siliconix
|
7,215 | 1.53730 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 10V | 52mOhm @ 15A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2360 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SI2301CDS-T1-E3
MOSFET P-CH 20V 3.1A SOT23-3
Vishay Siliconix
|
9,966 | 0.41000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.1A (Tc) | 2.5V, 4.5V | 112mOhm @ 2.8A, 4.5V | 1V @ 250µA | 10 nC @ 4.5 V | ±8V | 405 pF @ 10 V | - | 860mW (Ta), 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
IRF740ALPBF
MOSFET N-CH 400V 10A I2PAK
Vishay Siliconix
|
8,344 | 3.24000 | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
IRFB7430PBF
MOSFET N CH 40V 195A TO220
Infineon Technologies
|
7,269 | 3.67000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
DMP610DLQ-7
MOSFET BVDSS: 41V~60V SOT23 T&R
Diodes Incorporated
|
1,883 | 0.06050 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 186mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 0.5 nC @ 5 V | ±30V | 40 pF @ 25 V | - | 520mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
DMN3065LW-7
MOSFET N-CH 30V 4A SOT-323
Diodes Incorporated
|
4,744 | 0.49000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 2.5V, 10V | 52mOhm @ 4A, 10V | 1.5V @ 250µA | 11.7 nC @ 10 V | ±12V | 465 pF @ 15 V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 | Details |
|
IRFH8201TRPBF
MOSFET N-CH 25V 49A/100A 8PQFN
Infineon Technologies
|
2,999 | 2.21000 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 49A (Ta), 100A (Tc) | 4.5V, 10V | 0.95mOhm @ 50A, 10V | 2.35V @ 150µA | 111 nC @ 10 V | ±20V | 7330 pF @ 13 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN | Details |
|
FDMS8680
MOSFET N-CH 30V 14A/35A 8PQFN
onsemi
|
271 | 2.16000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1590 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN | Details |
|
FCH165N60E
MOSFET N-CH 600V 23A TO247-3
onsemi
|
868 | 4.03000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 165mOhm @ 11.5A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 2434 pF @ 380 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
MGSF3441VT1
P-CHANNEL MOSFET
onsemi
|
96,000 | 0.14000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
2SK2114-E
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
15,737 | 2.48000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IPB90N06S4L04ATMA2
MOSFET N-CH 60V 90A TO263-3
Infineon Technologies
|
79 | 3.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SI7625DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
Vishay Siliconix
|
8,265 | 1.18000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 126 nC @ 10 V | ±20V | 4427 pF @ 15 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Details |
|
3LN01SS-TL-H
MOSFET N-CH 30V 150MA SMCP
onsemi
|
432,000 | 0.07000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 150mA (Ta) | 1.5V, 4V | 3.7Ohm @ 80mA, 4V | - | 1.58 nC @ 10 V | ±10V | 7 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 | Details |
|
NTD60N03T4
MOSFET N-CH 28V 60A DPAK
onsemi
|
56,559 | 0.20000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 3V @ 250µA | 30 nC @ 4.5 V | ±20V | 2150 pF @ 24 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMP3018SSS-13
MOSFET P-CH 30V 10.5/25A 8SO T&R
Diodes Incorporated
|
2,322 | 0.26910 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.5A (Ta), 25A (Tc) | 4.5V, 10V | 12mOhm @ 11.5A, 10V | 3V @ 250µA | 57 nC @ 10 V | ±25V | 2714 pF @ 15 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | Details |
|
IPP60R160P7XKSA1
MOSFET N-CH 650V 20A TO220-3-1
Infineon Technologies
|
567 | 3.80000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 160mOhm @ 6.3A, 10V | 4V @ 350µA | 31 nC @ 10 V | ±20V | 1317 pF @ 400 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 | Details |
|
DI040P04PT-AQ
MOSFET, -40V, -40A, P, 22.7W
Diotec Semiconductor
|
9,431 | 1.74230 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 3538 pF @ 20 V | - | 22.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerWDFN | Details |
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