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TPH2R408QM,L1Q

In Stock: 9,790
TPH2R408QM,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TPH2R408QM,L1Q Toshiba Semiconductor and Storage
TPH2R408QM,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 120A 8SOP

TPH2R408QM,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 80V 120A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerVDFN.

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In Stock: 9,790

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.43mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8300 pF @ 40 V
FET Feature-
Power Dissipation (Max)3W (Ta), 210W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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