| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJL9836A_R2_00001
60V DUAL N-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
8,296 | 0.81000 | Active | 2 N-Channel (Dual) | Standard | 60V | 6A (Ta) | 21mOhm @ 5.5A, 10V | 2.5V @ 250µA | 28nC @ 10V | 1680pF @ 20V | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
NTLUD3191PZTBG
MOSFET 2P-CH 20V 1.1A 6UDFN
onsemi
|
21,000 | 0.17000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.1A | 250mOhm @ 1.5A, 4.5V | 1V @ 250µA | 3.5nC @ 4.5V | 160pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-UDFN (1.6x1.6) | Details |
|
PJX8601_R1_00001
COMPLEMENTARY ENHANCEMENT MODE M
Panjit International Inc.
|
3,585 | 0.39000 | Active | N and P-Channel Complementary | Standard | 20V | 500mA (Ta) | 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V | 900mV @ 250µA, 1V @ 250µA | 1.4nC @ 4.5V | 67pF @ 10V, 38pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
AOE6936
MOSFET 2 N-CH 30V 55A/85A 8DFN
Alpha & Omega Semiconductor Inc.
|
2,579 | 0.68530 | Active | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 55A (Tc), 85A (Tc) | 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V | 2.2V @ 250µA, 2.1V @ 250µA | 15nC @ 4.5V, 25nC @ 4.5V | 1150pF @ 15V, 2270pF @ 15V | 24W, 39W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) | Details |
|
BSD223PH6327XTSA1
MOSFET 2P-CH 20V 0.39A SOT363
Infineon Technologies
|
3,073 | 0.52000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6-1 | Details |
|
SI3552DV-T1-E3
MOSFET N/P-CH 30V 6TSOP
Vishay Siliconix
|
7,055 | 0.73000 | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A | 105mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.2nC @ 5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | Details |
|
BUK7K89-100EX
MOSFET 2N-CH 100V 13A LFPAK56D
Nexperia USA Inc.
|
5,710 | 1.16000 | Active | 2 N-Channel (Dual) | Standard | 100V | 13A | 82.5mOhm @ 5A, 10V | 4V @ 1mA | 13.6nC @ 10V | 811pF @ 25V | 38W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
RF1K4915496
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
4,629 | 0.70000 | Active | 2 N-Channel (Dual) | Standard | 60V | 2A (Ta) | 130mOhm @ 2A, 10V | 4V @ 250µA | 32nC @ 20V | 340pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
2SJ653
POWER MOSFET MOTOR DRIVERS
onsemi
|
37,609 | 2.85000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PMZ950UPE,315
0.5A, 20V, P CHANNEL, MOSFET, X
Nexperia USA Inc.
|
4,851 | 0.03000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
MCM3400A-TP
N-CHANNEL,MOSFETS,DFN2020-6L PAC
Micro Commercial Co
|
2,180 | 0.45000 | Active | 2 N-Channel | Standard | 30V | 5A | 32mOhm @ 5.8A, 10V | 1.5V @ 250µA | - | 1155pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | DFN2020-6L | Details |
|
ALD210804SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Advanced Linear Devices Inc.
|
8,071 | 6.08840 | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | Details |
|
ZXMHC10A07T8TA
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Diodes Incorporated
|
6,852 | 1.00880 | Active | 2 N and 2 P-Channel (Half Bridge) | Standard | 100V | 1A, 800mA | 700mOhm @ 1.5A, 10V | 4V @ 250µA | 2.9nC @ 10V | 138pF @ 60V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 | Details |
|
PJS6602_S2_00001
20V COMPLEMENTARY ENHANCEMENT MO
Panjit International Inc.
|
5,410 | 0.49000 | Active | N and P-Channel Complementary | Standard | 20V | 5.2A (Ta), 3.4A (Ta) | 36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V | 1.2V @ 250µA | 4.1nC @ 4.5V, 7nC @ 4.5V | 396pF @ 10V, 522pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
FDC6302P
SMALL SIGNAL FIELD-EFFECT TRANSI
Fairchild Semiconductor
|
187,026 | 0.25000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 25V | 120mA | 10Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31nC @ 4.5V | 11pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | Details |
|
APTM50TAM65FPG
MOSFET 6N-CH 500V 51A SP6-P
Microchip Technology
|
1,606 | 282.13000 | Active | 6 N-Channel (3-Phase Bridge) | Standard | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P | Details |
|
BSZ0910NDXTMA1
DIFFERENTIATED MOSFETS
Infineon Technologies
|
5,921 | 0.54750 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 9.5A (Ta), 25A (Tc) | 9.5mOhm @ 9A, 10V | 2V @ 250µA | 5.6nC @ 4.5V | 800pF @ 15V | 1.9W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 | Details |
|
PJX8803_R1_00001
20V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
4,000 | 0.44000 | Active | 2 P-Channel (Dual) | Standard | 20V | 600mA (Ta) | 340mOhm @ 600mA, 4.5V | 1V @ 250µA | 2.2nC @ 4.5V | 151pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
PMDT290UCEH
PMDT290UCE/SOT666/SOT6
Nexperia USA Inc.
|
8,422 | 0.12580 | Not For New Designs | N and P-Channel Complementary | Standard | 20V | 800mA (Ta), 550mA (Ta) | 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V | 950mV @ 250µA, 1.3V @ 250µA | 680pC @ 4.5V, 1.14nC @ 4.5V | 83pF @ 10V, 87pF @ 10V | 330mW (Ta), 1.09W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 | Details |
|
NTMD4820NR2G
MOSFET 2N-CH 30V 4.9A 8SOIC
onsemi
|
65,623 | 0.35000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 20mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 15V | 750mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
PMCPB5530X,115
MOSFET N/P-CH 20V 6HUSON
Nexperia USA Inc.
|
32,100 | 0.53000 | Active | N and P-Channel | - | 20V | 4A (Ta), 3.4A (Ta) | 34mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | 490mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-HUSON (2x2) | Details |
|
NTMFD5C470NLT1G
T6 40V LL S08FL DS
onsemi
|
3,516 | 3.14000 | Active | 2 N-Channel (Dual) | Standard | 40V | 11A (Ta), 36A (Tc) | 11.5mOhm @ 5A, 10V | 2.2V @ 20µA | 9nC @ 10V | 590pF @ 25V | 3W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
SSM6N16FE,L3F
SMALL SIGNAL MOSFET N-CH X 2 VDS
Toshiba Semiconductor and Storage
|
8,031 | 0.39000 | Active | 2 N-Channel (Dual) | Standard | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | Details |
|
IRF9362TRPBF
MOSFET 2P-CH 30V 8A 8SOIC
Infineon Technologies
|
2,793 | 1.08000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
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