BSZ0910NDXTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: BSZ0910NDXTMA1 Infineon Technologies
BSZ0910NDXTMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

BSZ0910NDXTMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. DIFFERENTIATED MOSFETS. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 1.9W (Ta), 31W (Tc).

In Stock: 5,921

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 15V
Power - Max1.9W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-WISON-8

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