PMDPB58UPE,115 - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMDPB58UPE,115 Nexperia USA Inc.
PMDPB58UPE,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 3.6A HUSON6

PMDPB58UPE,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by Nexperia USA Inc.. MOSFET 2P-CH 20V 3.6A HUSON6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UFDFN Exposed Pad, power - max 515mW.

In Stock: 19,628

Specifications

14 parameters
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.6A
Rds On (Max) @ Id, Vgs67mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds804pF @ 10V
Power - Max515mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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