SSM6N16FE,L3F - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Arrays
REF: SSM6N16FE,L3F Toshiba Semiconductor and Storage
SSM6N16FE,L3F

Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH X 2 VDS

SSM6N16FE,L3F is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. SMALL SIGNAL MOSFET N-CH X 2 VDS. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-563, SOT-666, power - max 150mW (Ta).

In Stock: 8,031

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds9.3pF @ 3V
Power - Max150mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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