| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
|
23,064 | 1.82000 | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
IPG20N04S4L11ATMA1
MOSFET 2N-CH 40V 20A 8TDSON
Infineon Technologies
|
2,191 | 1.29000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | Details |
|
DMP2900UDW-13
MOSFET BVDSS: 8V~24V SOT363 T&R
Diodes Incorporated
|
8,725 | 0.05610 | Active | 2 P-Channel (Dual) | Standard | 20V | 630mA (Ta) | 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 0.7nC @ 4.5V | 49pF @ 16V | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
SI6562CDQ-T1-BE3
N- AND P-CHANNEL 20-V (D-S) MOSF
Vishay Siliconix
|
1,731 | 1.07000 | Active | N and P-Channel | Standard | 20V | 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) | 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V | 1.5V @ 250µA | 23nC @ 10V, 51nC @ 10V | 850pF @ 10V, 1200pF @ 10V | 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
|
AON6926
MOSFET 2N-CH 30V 11A/12A 8DFN
Alpha & Omega Semiconductor Inc.
|
4,874 | 0.49900 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 11A, 12A | 11mOhm @ 20A, 10V | 2.5V @ 250µA | 24nC @ 10V | 1380pF @ 15V | 1.9W, 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN (5x6) | Details |
|
DMN2028UFDH-7
MOSFET 2N-CH 20V 6.8A POWERDI
Diodes Incorporated
|
7,468 | 0.44000 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6.8A | 20mOhm @ 4A, 10V | 1V @ 250µA | 8.5nC @ 4.5V | 151pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3030-8 | Details |
|
SI1902DL-T1-E3
MOSFET 2N-CH 20V 0.66A SC70-6
Vishay Siliconix
|
9,416 | 0.55000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 660mA | 385mOhm @ 660mA, 4.5V | 1.5V @ 250µA | 1.2nC @ 4.5V | - | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | Details |
|
CSD87588NT
MOSFET 2N-CH 30V 25A 5PTAB
Texas Instruments
|
5,806 | 1.60000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 25A | 9.6mOhm @ 15A, 10V | 1.9V @ 250µA | 4.1nC @ 4.5V | 736pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (5x3.5) | Details |
|
IPG20N06S2L50ATMA1
MOSFET 2N-CH 55V 20A 8TDSON
Infineon Technologies
|
4,188 | 0.63340 | Active | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | Details |
|
ALD1117PAL
MOSFET 2P-CH 10.6V 8DIP
Advanced Linear Devices Inc.
|
65 | 4.96000 | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
FDMC6890NZ
POWER FIELD-EFFECT TRANSISTOR, 4
Fairchild Semiconductor
|
14,330 | 0.39000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4A | 68mOhm @ 4A, 4.5V | 2V @ 250µA | 3.4nC @ 4.5V | 270pF @ 10V | 1.92W, 1.78W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | MicroFET 3x3mm | Details |
|
ALD212908PAL
MOSFET 2N-CH 10.6V 0.08A 8DIP
Advanced Linear Devices Inc.
|
4,975 | 5.44500 | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
FDMD84100
MOSFET 2N-CH 100V 7A 8-PQFN
onsemi
|
436 | 3.35000 | Last Time Buy | 2 N-Channel (Dual) Common Source | Standard | 100V | 7A | 20mOhm @ 7A, 10V | 4V @ 250µA | 16nC @ 10V | 980pF @ 50V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power 3.3x5 | Details |
|
FDZ1905PZ
SMALL SIGNAL FIELD-EFFECT TRANSI
Fairchild Semiconductor
|
2,700 | 0.34000 | Active | 2 P-Channel (Dual) | Logic Level Gate | - | - | 126mOhm @ 1A, 4.5V | 1V @ 250µA | - | - | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | 6-WLCSP (1x1.5) | Details |
|
SSM6N357R,LF
SMALL LOW R-ON MOSFETS DUAL NCH
Toshiba Semiconductor and Storage
|
2,167 | 0.43000 | Active | 2 N-Channel (Dual) | Standard | 60V | 650mA (Ta) | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | 60pF @ 12V | 1.5W (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F | Details |
|
FDS9945
MOSFET 2N-CH 60V 3.5A 8SOIC
onsemi
|
4,372 | 0.71000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 3.5A | 100mOhm @ 3.5A, 10V | 3V @ 250µA | 13nC @ 5V | 420pF @ 30V | 1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI4936BDY-T1-E3
MOSFET 2N-CH 30V 6.9A 8-SOIC
Vishay Siliconix
|
307 | 1.00000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 35mOhm @ 5.9A, 10V | 3V @ 250µA | 15nC @ 10V | 530pF @ 15V | 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
RM4503S8
MOSFET N&P-CH 30V 10A /9.1A 8SOP
Rectron USA
|
6,511 | 0.19000 | Active | N and P-Channel | Standard | 30V | 10A (Ta), 9.1A (Ta) | 10mOhm @ 10A, 10V, 20mOhm @ 9.1A, 10V | 3V @ 250µA | 13nC @ 4.5V, 30nC @ 10V | 1550pF @ 15V, 1600pF @ 15V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
DMC3028LSDXQ-13
MOSFET N/P-CH 30V 8SOIC
Diodes Incorporated
|
22,507 | 0.82000 | Active | N and P-Channel | Standard | 30V | 5.5A, 5.8A | 27mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 5V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
SQJ560EP-T1_BE3
N- AND P-CHANNEL 60-V (D-S) 175C
Vishay Siliconix
|
6,835 | 1.41000 | Active | N and P-Channel | Standard | 60V | 30A (Tc), 18A (Tc) | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 45nC @ 10V | 1650pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
TSM150NB04LDCR RLG
DUAL N-CHANNEL POWER MOSFET 40V,
Taiwan Semiconductor Corporation
|
7,264 | 1.08240 | Active | 2 N-Channel (Dual) | Standard | 40V | 8A (Ta), 37A (Tc) | 15mOhm @ 8A, 10V | 2.5V @ 250µA | 18nC @ 10V | 966pF @ 20V | 2W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | Details |
|
IRF9952TRPBF
MOSFET N/P-CH 30V 8-SOIC
Infineon Technologies
|
15,495 | 0.98000 | Active | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMN33D8LDW-7
MOSFET 2N-CH 30V 0.25A
Diodes Incorporated
|
2,188 | 0.41000 | Active | 2 N-Channel (Dual) | Standard | 30V | 250mA | 2.4Ohm @ 250mA, 10V | 1.5V @ 100µA | 1.23nC @ 10V | 48pF @ 5V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
DMC1028UFDB-7
MOSFET N/P-CH 12V/20V 6UDFN
Diodes Incorporated
|
2,850 | 0.87000 | Active | N and P-Channel | Standard | 12V, 20V | 6A, 3.4A | 25mOhm @ 5.2A, 4.5V | 1V @ 250µA | 18.5nC @ 8V | 787pF @ 6V | 1.36W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
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