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DMG8601UFG-7

In Stock: 9,917
DMG8601UFG-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMG8601UFG-7 Diodes Incorporated
DMG8601UFG-7

Diodes Incorporated

MOSFET 2N-CH 20V 6.1A DFN

DMG8601UFG-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 6.1A DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerUDFN, power - max 920mW.

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In Stock: 9,917

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.1A
Rds On (Max) @ Id, Vgs23mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds143pF @ 10V
Power - Max920mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerUDFN
Supplier Device PackageU-DFN3030-8

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