| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCQ4953-TP
MOSFET 2 P-CH 30V 5A 8SOP
Micro Commercial Co
|
7,008 | 0.45000 | Active | 2 P-Channel (Dual) | Standard | 30V | 5A | 60mOhm @ 4.9A, 10V | 2.5V @ 250µA | 25nC @ 10V | - | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
2SK3434-Z-AZ
N-CHANNEL SWITCHING POWER MOSFET
Renesas Electronics America Inc
|
1,904 | 1.15000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PJS6604_S2_00001
30V COMPLEMENTARY ENHANCEMENT MO
Panjit International Inc.
|
6,300 | 0.44000 | Active | N and P-Channel Complementary | Standard | 30V | 4.4A (Ta), 3.1A (Ta) | 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V | 1.2V @ 250µA, 1.3V @ 250µA | 11.3nC @ 10V, 11nC @ 10V | 447pF @ 15V, 443pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
PJL9809_R2_00001
30V DUAL P-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
9,778 | 0.59000 | Active | 2 P-Channel (Dual) | Standard | 30V | 5.3A (Ta) | 30mOhm @ 4A, 10V | 2.5V @ 250µA | 7.8nC @ 4.5V | 870pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
PJS6816_S1_00001
20V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
2,000 | 0.45000 | Active | 2 N-Channel (Dual) | Standard | 20V | 5.2A (Ta) | 29mOhm @ 5.2A, 4.5V | 1.2V @ 250µA | 7nC @ 4.5V | 513pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
PMV50EPEA,215
4.2A, 30V, P CHANNEL, SILICON, M
Nexperia USA Inc.
|
5,325 | 0.06000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
TQM110NB04DCR RLG
40V, 50A, DUAL N-CHANNEL POWER M
Taiwan Semiconductor Corporation
|
3,247 | 3.88000 | Active | 2 N-Channel (Dual) | Standard | 40V | 10A (Ta), 50A (Tc) | 11mOhm @ 10A, 10V | 3.8V @ 250µA | 26nC @ 10V | 1354pF @ 20V | 2.5W (Ta), 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerTDFN | 8-PDFNU (5x6) | Details |
|
STS8DN3LLH5
MOSFET 2N-CH 30V 10A 8SO
STMicroelectronics
|
2,492 | 1.83000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 19mOhm @ 5A, 10V | 1V @ 250µA | 5.4nC @ 4.5V | 724pF @ 25V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
ECH8667-TL-HX
MOSFET 2P-CH 30V 5.5A ECH8
onsemi
|
6,000 | 0.33000 | Obsolete | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH | Details |
|
ZXMC3AM832TA
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Diodes Incorporated
|
513 | 0.67000 | Obsolete | N and P-Channel | Logic Level Gate | 30V | 2.9A, 2.1A | 120mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.9nC @ 10V | 190pF @ 25V | 1.7W | - | Surface Mount | 8-VDFN Exposed Pad | 8-MLP (3x2) | Details |
|
NTK3142PT1H
SMALL SIGNAL P-CHANNEL MOSFET
Sanyo
|
20,000 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FDS6990AS
MOSFET 2N-CH 30V 7.5A 8SOIC
onsemi
|
7,393 | 0.93000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A | 22mOhm @ 7.5A, 10V | 3V @ 1mA | 14nC @ 5V | 550pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
CAS120M12BM2
MOSFET 2N-CH 1200V 193A MODULE
Wolfspeed, Inc.
|
516 | 539.91000 | Not For New Designs | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 193A (Tc) | 16mOhm @ 120A, 20V | 2.6V @ 6mA (Typ) | 378nC @ 20V | 6470pF @ 800V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module | Details |
|
SIL2308-TP
N/P-CHANNEL MOSFETSOT23-6L
Micro Commercial Co
|
18,613 | 0.38000 | Active | N and P-Channel | Standard | 20V | 5A, 4A | 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V | 1V @ 250µA | 11nC @ 4.5V, 12nC @ 2.5V | 800pF, 405pF @ 8V, 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L | Details |
|
CSD87334Q3D
MOSFET 2N-CH 30V 20A 8SON
Texas Instruments
|
5,084 | 0.76320 | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 20A | 6mOhm @ 12A, 8V | 1.2V @ 250µA | 8.3nC @ 4.5V | 1260pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON (3.3x3.3) | Details |
|
SI4900DY-T1-E3
MOSFET 2N-CH 60V 5.3A 8-SOIC
Vishay Siliconix
|
1,674 | 1.31000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58mOhm @ 4.3A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
NVMFD5877NLWFT1G
MOSFET 2N-CH 60V 6A SO8FL
onsemi
|
1,500 | 1.00000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 6A | 39mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 10V | 540pF @ 25V | 3.2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
GE12047CCA3
1200V 475A SIC HALF-BRIDGE MODUL
General Electric
|
20 | 1925.00000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 475A | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29.3nF @ 600V | 1250W | -55°C ~ 150°C (Tc) | Chassis Mount | Module | - | Details |
|
SSM6N15AFU,LF
MOSFET 2N-CH 30V 0.1A 2-2J1C
Toshiba Semiconductor and Storage
|
6,155 | 0.37000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Details |
|
2SK2725-E
5A, 500V, N-CHANNEL MOSFET
Renesas Electronics America Inc
|
178 | 4.21000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IRF7316TRPBF
MOSFET 2P-CH 30V 4.9A 8SO
Infineon Technologies
|
1,313 | 1.19000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
SIZF928DT-T1-GE3
DUAL N-CHANNEL 30 V (D-S) MOSFET
Vishay Siliconix
|
5,808 | 1.73000 | Active | 2 N-Channel (Dual) | Standard | 30V | 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) | 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V | 2V @ 250µA | - | - | 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (6x5) | Details |
|
SIA918EDJ-T1-GE3
MOSFET 2N-CH 30V POWERPAK SC70-6
Vishay Siliconix
|
4,178 | 0.50000 | Active | 2 N-Channel (Dual) | Standard | 30V | 4.5A (Tc) | 58mOhm @ 3A, 4.5V | 900mV @ 250µA | 5.5nC @ 4.5V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | Details |
|
EPC2108
GANFET 3 N-CH 60V/100V 9BGA
EPC
|
1,576 | 1.91000 | Active | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) | Details |
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