SIA918EDJ-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIA918EDJ-T1-GE3 Vishay Siliconix
SIA918EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V POWERPAK SC70-6

SIA918EDJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V POWERPAK SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6 Dual, power - max 7.8W.

In Stock: 4,178

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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