| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSCSM70AM07CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Microchip Technology
|
4,597 | 383.39000 | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | Details |
|
SI1023CX-T1-GE3
MOSFET 2P-CH 20V SC89-6
Vishay Siliconix
|
2,990 | 0.47000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | - | 756mOhm @ 350mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 45pF @ 10V | 220mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89 (SOT-563F) | Details |
|
CSD87384MT
MOSFET 2N-CH 30V 30A 5PTAB
Texas Instruments
|
6,481 | 2.20000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 30A | 7.7mOhm @ 25A, 8V | 1.9V @ 250µA | 9.2nC @ 4.5V | 1150pF @ 15V | 8W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (5x3.5) | Details |
|
SQJ910AEP-T1_BE3
DUAL N-CHANNEL 30-V (D-S) 175C M
Vishay Siliconix
|
5,439 | 1.34000 | Active | 2 N-Channel (Dual) | Standard | 30V | 30A (Tc) | 7mOhm @ 12A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1869pF @ 15V | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
DMC3025LSDQ-13
MOSFETN/P-CH30VSO-8
Diodes Incorporated
|
46 | 0.73000 | Active | N and P-Channel | Standard | 30V | 6.5A (Ta), 4.2A (Ta) | 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V | 2V @ 250µA | 4.6nC @ 4.5V, 5.1nC @ 4.5V | 501pF @ 15V, 590pF @ 25V | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMP4047SSDQ-13
MOSFET BVDSS: 31V~40V SO-8 T&R 2
Diodes Incorporated
|
9,016 | 0.35410 | Active | 2 P-Channel (Dual) | Standard | 40V | 5.1A (Ta) | 45mOhm @ 4.4A, 10V | 3V @ 250µA | 21.5nC @ 10V | 1154pF @ 20V | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMC67D8UFDBQ-13
MOSFET BVDSS: 41V-60V U-DFN2020-
Diodes Incorporated
|
9,455 | 0.12360 | Active | N and P-Channel Complementary | Standard | 60V, 20V | 390mA (Ta), 2.9A (Ta) | 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V | 2.5V @ 250µA, 1.25V @ 250µA | 0.4pC @ 4.5V, 7.3nC @ 4.5V | 41pF @ 25V, 443pF @ 16V | 580mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
DMN3015LSD-13
MOSFET 2N-CH 30V 8.4A 8SO
Diodes Incorporated
|
5,129 | 0.71000 | Active | 2 N-Channel (Dual) | Standard | 30V | 8.4A (Ta) | 15mOhm @ 12A, 10V | 2.5V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
|
1,420 | 9.16000 | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
DMG9926UDM-7
MOSFET 2N-CH 20V 4.2A SOT-26
Diodes Incorporated
|
48,137 | 0.56000 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 4.2A | 28mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 8.3nC @ 4.5V | 856pF @ 10V | 980mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | Details |
|
RM8205F
MOSFET 2 N-CH 20V 6A SOT23-6
Rectron USA
|
2,598 | 0.06800 | Active | 2 N-Channel (Dual) | Standard | 20V | 6A (Ta) | 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V | 1.2V @ 250µA | - | 1035pF @ 20V | 1.14W (Ta) | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
NVMFD5483NLWFT3G
MOSFET 2N-CH 60V 6.4A 8DFN
onsemi
|
6,512 | 1.15190 | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 60V | 6.4A | 36mOhm @ 15A, 10V | 2.5V @ 250µA | 23.4nC @ 10V | 668pF @ 25V | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
ALD1108ESCL
MOSFET 4N-CH 10V 16SOIC
Advanced Linear Devices Inc.
|
3,522 | 5.54400 | Active | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | Details |
|
IRF8910TRPBF
MOSFET 2N-CH 20V 10A 8-SOIC
Infineon Technologies
|
3,030 | 1.12000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
PJL9854_R2_00001
40V DUAL N-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
1,835 | 0.71000 | Active | 2 N-Channel (Dual) | Standard | 40V | 9A (Ta) | 12mOhm @ 8A, 10V | 2.5V @ 250µA | 10nC @ 4.5V | 1040pF @ 20V | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
FDME1023PZT
MOSFET 2P-CH 20V 2.6A 6MICROFET
onsemi
|
7,963 | 0.93000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.6A | 142mOhm @ 2.3A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | 405pF @ 10V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | Details |
|
SI4816BDY-T1-E3
MOSFET 2N-CH 30V 5.8A 8-SOIC
Vishay Siliconix
|
1,230 | 1.72000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 5.8A, 8.2A | 18.5mOhm @ 6.8A, 10V | 3V @ 250µA | 10nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMC6070LND-7
MOSFET N/P-CH 60V 8POWERDI
Diodes Incorporated
|
9,744 | 0.33500 | Active | N and P-Channel | Standard | 60V | 3.1A, 2.4A | 85mOhm @ 1.5A, 10V | 3V @ 250µA | 11.5nC @ 10V | 731pF @ 20V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXB) | Details |
|
FDB3652SB82059
1-ELEMENT, N-CHANNEL
Fairchild Semiconductor
|
500 | 2.40000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FDS8858CZ
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
onsemi
|
7,124 | 1.06000 | Active | N and P-Channel | Logic Level Gate | 30V | 8.6A, 7.3A | 17mOhm @ 8.6A, 10V | 3V @ 250µA | 24nC @ 10V | 1205pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SIZ200DT-T1-GE3
MOSFET N-CH DUAL 30V
Vishay Siliconix
|
5,311 | 1.08000 | Active | 2 N-Channel (Dual) | Standard | 30V | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V | 2.4V @ 250µA | 28nC @ 10V, 30nC @ 10V | 1510pF @ 15V, 1600pF @ 15V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | Details |
|
DMN3270UVT-7
MOSFET BVDSS: 25V-30V TSOT26 T&R
Diodes Incorporated
|
9,345 | 0.15030 | Active | 2 N-Channel (Dual) | Standard | 30V | 1.6A (Ta) | 270mOhm @ 650mA, 4.5V | 900mV @ 40µA | 3.07nC @ 4.5V | 161pF @ 15V | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
CSD87330Q3D
MOSFET 2N-CH 30V 20A 8SON
Texas Instruments
|
52,799 | 1.61000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 2.1V @ 250µA | 5.8nC @ 4.5V | 900pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (3.3x3.3) | Details |
|
TSM6968SDCA RVG
MOSFET 2 N-CH 20V 6.5A 8TSSOP
Taiwan Semiconductor Corporation
|
1,717 | 1.53000 | Active | 2 N-Channel (Dual) | Standard | 20V | 6.5A (Ta) | 22mOhm @ 6.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 950pF @ 10V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
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