| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN5L06DMKQ-7
MOSFET 2N-CH 50V 305MA SOT26
Diodes Incorporated
|
6,127 | 0.56000 | Active | 2 N-Channel (Dual) | Standard | 50V | 305mA | 2Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | Details |
|
SQJB40EP-T1_BE3
DUAL N-CHANNEL 40-V (D-S) 175C M
Vishay Siliconix
|
9,425 | 1.25000 | Active | 2 N-Channel (Dual) | Standard | 40V | 30A (Tc) | 8mOhm @ 8A, 10V | 2.5V @ 250µA | 35nC @ 10V | 1900pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
NTMD6P02R2SG
MOSFET 2P-CH 20V 4.8A 8SOIC
onsemi
|
1,270 | 0.43000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.8A | 33mOhm @ 6.2A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | 1700pF @ 16V | 750mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
RF1K4909396
P-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
2,525 | 0.57000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 12V | 2.5A (Ta) | 130mOhm @ 2.5A, 5V | 2V @ 250µA | 24nC @ 10V | 775pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
APTC60HM70SCTG
MOSFET 4N-CH 600V 39A SP4
Microchip Technology
|
8,262 | 181.70570 | Active | 4 N-Channel (Half Bridge) | Standard | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | Details |
|
CAB006M12GM3
1200V 2B HALF-BRIDGE
Wolfspeed, Inc.
|
1,072 | 315.24000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | - | 6.9mOhm @ 200A, 15V | 3.6V @ 69mA | 708nC @ 15V | 20.4nF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - | Details |
|
SI5935CDC-T1-GE3
MOSFET 2P-CH 20V 4A 1206-8
Vishay Siliconix
|
9,681 | 0.58000 | Active | 2 P-Channel (Dual) | Standard | 20V | 4A | 100mOhm @ 3.1A, 4.5V | 1V @ 250µA | 11nC @ 5V | 455pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | Details |
|
NTLUD3A50PZTAG
MOSFET 2P-CH 20V 2.8A UDFN
onsemi
|
31 | 0.91000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | Details |
|
SQJ992EP-T1_BE3
DUAL N-CHANNEL 60-V (D-S) 175C M
Vishay Siliconix
|
3,250 | 1.46000 | Active | 2 N-Channel (Dual) | Standard | 60V | 15A (Tc) | 56.2mOhm @ 3.7A, 10V | 2.5V @ 250µA | 12nC @ 10V | 446pF @ 30V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
SQ1912EH-T1_GE3
MOSFET 2 N-CH 20V 800MA SC70-6
Vishay Siliconix
|
2,932 | 0.51000 | Active | 2 N-Channel (Dual) | Standard | 20V | 800mA (Tc) | 280mOhm @ 1.2A, 4.5V | 1.5V @ 250µA | 1.15nC @ 4.5V | 75pF @ 10V | 1.5W | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | Details |
|
BSC0923NDIATMA1
MOSFET 2N-CH 30V 17A/32A TISON8
Infineon Technologies
|
8,206 | 1.71000 | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | 1160pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 | Details |
|
ECH8604-TL-E
N-CHANNEL MOSFET
onsemi
|
3,000 | 0.31000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
DMP4050SSD-13
MOSFET 2P-CH 40V 4A 8SO
Diodes Incorporated
|
138,137 | 1.02000 | Active | 2 P-Channel (Dual) | Standard | 40V | 4A | 50mOhm @ 6A, 10V | 3V @ 250µA | 13.9nC @ 10V | 674pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
FDMC007N30D
MOSFET 2 N-CHANNEL 30V 46A 8MLP
onsemi
|
1,853 | 1.01000 | Active | 2 N-Channel (Dual) | Standard | 30V | 46A | 11.6mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | 1110pF @ 15V, 2360pF @ 15V | 1.9W, 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) | Details |
|
GE17042CCA3
1700V 425A SIC HALF-BRIDGE MODUL
General Electric
|
16 | 2819.00000 | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 18V | 29100pF @ 900V | 1250W | 175°C (TJ) | Chassis Mount | Module | - | Details |
|
NVMD6N03R2G
MOSFET 2N-CH 30V 6A 8SOIC
onsemi
|
4,915 | 0.28000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 32mOhm @ 6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | 1.29W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
HP4936DYT
N-CHANNEL POWER MOSFET
Harris Corporation
|
2,500 | 0.25000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.8A (Ta) | 37mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 625pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMC25D1UVT-13
MOSFET N/P-CH 25V/12V TSOT26
Diodes Incorporated
|
5,670 | 0.14180 | Active | N and P-Channel | Standard | 25V, 12V | 500mA, 3.9A | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.9nC @ 10V | 27.6pF @ 10V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
ZXMN3A04DN8TA
MOSFET 2N-CH 30V 6.5A 8-SOIC
Diodes Incorporated
|
3,381 | 1.91000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.5A | 20mOhm @ 12.6A, 10V | 1V @ 250µA (Min) | 36.8nC @ 10V | 1890pF @ 15V | 1.81W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
CSD88537NDT
MOSFET 2N-CH 60V 15A 8SOIC
Texas Instruments
|
5,155 | 1.74000 | Active | 2 N-Channel (Dual) | Standard | 60V | 15A | 15mOhm @ 8A, 10V | 3.6V @ 250µA | 18nC @ 10V | 1400pF @ 30V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
PJS6603_S2_00001
30V COMPLEMENTARY ENHANCEMENT MO
Panjit International Inc.
|
5,809 | 0.45000 | Active | N and P-Channel Complementary | Standard | 30V | 4.4A (Ta), 2.9A (Ta) | 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V | 2.1V @ 250µA | 5.8nC @ 10V, 9.8nC @ 10V | 235pF @ 15V, 396pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC
|
15,165 | 2.37000 | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - | Die | Die | Details |
|
CSD87313DMS
MOSFET 2 N-CHANNEL 30V 8WSON
Texas Instruments
|
1,548 | 0.97600 | Active | 2 N-Channel (Dual) Common Drain | Standard | 30V | - | - | 1.25V @ 250µA | 28nC @ 4.5V | 4290pF @ 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WSON (3.3x3.3) | Details |
|
DMN4031SSD-13
MOSFET 2N-CH 40V 5.2A 8SO
Diodes Incorporated
|
7,554 | 0.70000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 5.2A | 31mOhm @ 6A, 10V | 3V @ 250µA | 18.6nC @ 10V | 945pF @ 20V | 1.42W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
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