| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUK7K8R7-40EX
MOSFET 2N-CH 40V 30A 56LFPAK
Nexperia USA Inc.
|
7,075 | 1.50000 | Active | 2 N-Channel (Dual) | Standard | 40V | 30A | 8.5mOhm @ 15A, 10V | 4V @ 1mA | 21.8nC @ 10V | 1439pF @ 25V | 53W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
Infineon Technologies
|
298 | 125.38000 | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module | Details |
|
PJS6812_S1_00001
20V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
3,000 | 0.49000 | Active | 2 N-Channel (Dual) | Standard | 20V | 3.7A (Ta) | 56mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 4.57nC @ 4.5V | 350pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
NVMFD5C650NLT1G
MOSFET 2N-CH 60V 111A S08FL
onsemi
|
5,729 | 4.98000 | Active | 2 N-Channel (Dual) | Standard | 60V | 21A (Ta), 111A (Tc) | 4.2mOhm @ 20A, 10V | 2.2V @ 98µA | 16nC @ 4.5V | 2546pF @ 25V | 3.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
DMN61D9UDWQ-7
MOSFET BVDSS: 41V~60V SOT363 T&R
Diodes Incorporated
|
9,610 | 0.05670 | Active | 2 N-Channel (Dual) | Standard | 60V | 318mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.6nC @ 4.5V | 39pF @ 30V | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
FX30KMJ-2#B00
HIGH SPEED SWITCHING P CHANNEL ,
Renesas Electronics America Inc
|
215 | 2.27000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SI7234DP-T1-GE3
MOSFET 2N-CH 12V 60A PPAK SO-8
Vishay Siliconix
|
1,758 | 3.09000 | Active | 2 N-Channel (Dual) | Standard | 12V | 60A | 3.4mOhm @ 20A, 4.5V | 1.5V @ 250µA | 120nC @ 10V | 5000pF @ 6V | 46W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
SQ4937EY-T1_GE3
MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Vishay Siliconix
|
6,920 | 1.29000 | Active | 2 P-Channel (Dual) | Standard | 30V | 5A (Tc) | 75mOhm @ 3.9A, 10V | 2.5V @ 250µA | 15nC @ 10V | 480pF @ 25V | 3.3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI4922BDY-T1-GE3
MOSFET 2N-CH 30V 8A 8-SOIC
Vishay Siliconix
|
5,000 | 1.72000 | Active | 2 N-Channel (Dual) | Standard | 30V | 8A | 16mOhm @ 5A, 10V | 1.8V @ 250µA | 62nC @ 10V | 2070pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
PJL9812_R2_00001
30V DUAL N-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
6,023 | 0.23320 | Active | 2 N-Channel (Dual) | Standard | 30V | 6A (Ta) | 35mOhm @ 6A, 10V | 1.3V @ 250µA | 5.1nC @ 4.5V | 421pF @ 15V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
FX30KMJ-3#B00
HIGH SPEED SWITCHING P CHANNEL ,
Renesas Electronics America Inc
|
2,526 | 2.27000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
MSCSM120AM02CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI
Microchip Technology
|
1 | 1648.58000 | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 947A (Tc) | 2.6mOhm @ 480A, 20V | 2.8V @ 12mA | 2784nC @ 20V | 36240pF @ 1000V | 3.75kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI | Details |
|
DMC2990UDJ-7
MOSFET N/P-CH 20V SOT963
Diodes Incorporated
|
9,525 | 0.45000 | Active | N and P-Channel | Logic Level Gate | 20V | 450mA, 310mA | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 27.6pF @ 15V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 | Details |
|
NX7002BKXBZ
MOSFET 2N-CH 60V 0.26A 6DFN
Nexperia USA Inc.
|
4,183 | 0.50000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 260mA | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | 23.6pF @ 10V | 285mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 | Details |
|
SI7212DN-T1-GE3
MOSFET 2N-CH 30V 4.9A 1212-8
Vishay Siliconix
|
1,830 | 1.64000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
HUF75637S3
MOSFET N-CH 100V 44A D2PAK
Fairchild Semiconductor
|
6,080 | 1.50000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IPG20N10S4L22ATMA1
MOSFET 2N-CH 8TDSON
Infineon Technologies
|
6,528 | 1.92000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | Details |
|
DMN32D2LDF-7
MOSFET 2N-CH 30V 0.4A SOT353
Diodes Incorporated
|
2,190 | 0.41000 | Active | 2 N-Channel (Dual) Common Source | Logic Level Gate | 30V | 400mA | 1.2Ohm @ 100mA, 4V | 1.2V @ 250µA | - | 39pF @ 3V | 280mW | -55°C ~ 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SOT-353 | Details |
|
FS50UM-3
50A, 150V, N-CHANNEL MOSFET
Renesas Electronics America Inc
|
8,919 | 4.44000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PMV28UNEA,215
2.9A, 20V, N CHANNEL, SILICON, M
Nexperia USA Inc.
|
9,737 | 0.07000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NVMFD5C680NLWFT1G
MOSFET 2N-CH 60V 26A S08FL
onsemi
|
9,868 | 1.75000 | Active | 2 N-Channel (Dual) | Standard | 60V | 7.5A (Ta), 26A (Tc) | 28mOhm @ 5A, 10V | 2.2V @ 13µA | 2nC @ 4.5V | 350pF @ 25V | 3W (Ta), 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
SQJ262EP-T1_GE3
MOSFET 2 N-CH 60V POWERPAK SO8
Vishay Siliconix
|
2,858 | 1.42000 | Active | 2 N-Channel (Dual) | Standard | 60V | 15A (Tc), 40A (Tc) | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 2.5V @ 250µA | 10nC @ 10V, 23nC @ 10V | 550pF @ 25V, 1260pF @ 25V | 27W (Tc), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual Asymmetric | Details |
|
MCQ4828A-TP
N-CHANNEL ENHANCEMENT MOSFETSOP-
Micro Commercial Co
|
7,384 | 0.94000 | Active | 2 N-Channel (Dual) | Standard | 60V | 4.5A (Ta) | 56mOhm @ 4.5A, 10V | 3V @ 250µA | 10.5nC @ 10V | 540pF @ 30V | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
|
SI1035X-T1-GE3
MOSFET N/P-CH 20V SC-89
Vishay Siliconix
|
9,366 | 0.48000 | Active | N and P-Channel | Logic Level Gate | 20V | 180mA, 145mA | 5Ohm @ 200mA, 4.5V | 400mV @ 250µA (Min) | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89 (SOT-563F) | Details |
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