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FF23MR12W1M1B11BOMA1

In Stock: 298
FF23MR12W1M1B11BOMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: FF23MR12W1M1B11BOMA1 Infineon Technologies
FF23MR12W1M1B11BOMA1

Infineon Technologies

MOSFET 2 N-CH 1200V 50A MODULE

FF23MR12W1M1B11BOMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2 N-CH 1200V 50A MODULE. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, power - max 20mW.

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In Stock: 298

Specifications

14 parameters
Product StatusLast Time Buy
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C50A
Rds On (Max) @ Id, Vgs23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds3950pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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