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DMC67D8UFDBQ-13

In Stock: 9,455
DMC67D8UFDBQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMC67D8UFDBQ-13 Diodes Incorporated
DMC67D8UFDBQ-13

Diodes Incorporated

MOSFET BVDSS: 41V-60V U-DFN2020-

DMC67D8UFDBQ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 41V-60V U-DFN2020-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 580mW (Ta).

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In Stock: 9,455

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)60V, 20V
Current - Continuous Drain (Id) @ 25°C390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds41pF @ 25V, 443pF @ 16V
Power - Max580mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

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