| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMC2710UVT-7
MOSFET BVDSS: 8V-24V TSOT26
Diodes Incorporated
|
3,814 | 0.11330 | Active | N and P-Channel Complementary | Standard | 20V | 1.2A (Ta), 900mA (Ta) | 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V | 1V @ 250µA | 600pC @ 4.5V, 700pC @ 4.5V | 42pF @ 16V, 49pF @ 16V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-23-6 | Details |
|
SI4936BDY-T1-GE3
MOSFET 2N-CH 30V 6.9A 8-SOIC
Vishay Siliconix
|
8,392 | 1.38000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 35mOhm @ 5.9A, 10V | 3V @ 250µA | 15nC @ 10V | 530pF @ 15V | 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI6933DQ
P-CHANNEL MOSFET
Fairchild Semiconductor
|
1,451 | 0.49000 | Active | 2 P-Channel (Dual) | Standard | 30V | 3.5A (Ta) | 45mOhm @ 3.5A, 10V | 3V @ 250µA | 30nC @ 10V | 854pF @ 15V | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | Details |
|
BUK9K134-100EX
MOSFET 2N-CH 100V 8.5A LFPAK56D
Nexperia USA Inc.
|
5,932 | 1.04000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 8.5A | 159mOhm @ 5A, 5V | 2.1V @ 1mA | 7.4nC @ 5V | 755pF @ 25V | 32W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
SQ4940AEY-T1_BE3
MOSFET 2N-CH 40V 8A 8SOIC
Vishay Siliconix
|
1,909 | 1.05000 | Active | 2 N-Channel (Dual) | Standard | 40V | 8A (Tc) | 24mOhm @ 5.3A, 10V | 2.5V @ 250µA | 43nC @ 10V | 741pF @ 20V | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SSM6N44FE,LM
MOSFET 2N-CH 30V 0.1A ES6
Toshiba Semiconductor and Storage
|
2,699 | 0.45000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | Details |
|
SI4946BEY-T1-E3
MOSFET 2N-CH 60V 6.5A 8-SOIC
Vishay Siliconix
|
2,723 | 1.55000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 6.5A | 41mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | 840pF @ 30V | 3.7W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IAUC45N04S6L063HATMA1
IAUC45N04S6L063HATMA1
Infineon Technologies
|
2,717 | 1.44000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 45A (Tj) | 6.3mOhm @ 22A, 10V | 2V @ 9µA | 13nC @ 10V | 775pF @ 25V | 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-57 | Details |
|
ZXMP3A16DN8TA
MOSFET 2P-CH 30V 4.2A 8-SOIC
Diodes Incorporated
|
5,892 | 1.57000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.2A | 45mOhm @ 4.2A, 10V | 1V @ 250µA (Min) | 29.6nC @ 10V | 1022pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
FDMD8260LET60
MOSFET 2N-CH 60V 15A 12POWER
onsemi
|
3,522 | 3.26370 | Last Time Buy | 2 N-Channel (Dual) | Standard | 60V | 15A | 5.8mOhm @ 15A, 10V | 3V @ 250µA | 68nC @ 10V | 5245pF @ 30V | 1.1W | -55°C ~ 175°C (TJ) | Surface Mount | 12-PowerWDFN | 12-Power3.3x5 | Details |
|
BSC0911NDATMA1
MOSFET 2N-CH 25V 18A/30A TISON8
Infineon Technologies
|
7,881 | 2.18000 | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 18A, 30A | 3.2mOhm @ 20A, 10V | 2V @ 250µA | 12nC @ 4.5V | 1600pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 | Details |
|
DMN2050LFDB-13
MOSFET 2N-CH 20V 3.3A 6UDFN
Diodes Incorporated
|
19,965 | 0.44000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 3.3A | 45mOhm @ 5A, 4.5V | 1V @ 250µA | 12nC @ 10V | 389pF @ 10V | 730mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
MSCSM120AM027CT6AG
PM-MOSFET-SIC-SBD~-SP6C
Microchip Technology
|
6,669 | 1264.44000 | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C | Details |
|
FF6MR12KM1BOSA1
MEDIUM POWER 62MM
Infineon Technologies
|
36 | 522.34000 | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-62MM | Details |
|
DMN2053UFDBQ-13
MOSFET BVDSS: 8V~24V U-DFN2020-6
Diodes Incorporated
|
3,192 | 0.13640 | Active | 2 N-Channel (Dual) | Standard | 20V | 4.6A (Ta) | 35mOhm @ 5A, 4.5V | 1V @ 250µA | 7.7nC @ 10V | 369pF @ 10V | 820mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
MSCSM120AM042CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI
Microchip Technology
|
2 | 978.24000 | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1kV | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI | Details |
|
MSCSM70HM19CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Microchip Technology
|
1 | 268.53000 | Active | 4 N-Channel | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | Details |
|
STL15DN4F5
MOSFET 2N-CH 40V 60A POWERFLAT
STMicroelectronics
|
3,938 | 3.15000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 60A | 9mOhm @ 7.5A, 10V | 4V @ 250µA | 25nC @ 10V | 1550pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | Details |
|
FDPC8016S
MOSFET 2N-CH 25V 8PWRCLIP
onsemi
|
6,299 | 1.86000 | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 25V | 20A, 35A | 3.8mOhm @ 20A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2375pF @ 13V | 2.1W, 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power Clip 56 | Details |
|
SI7923DN-T1-GE3
MOSFET 2P-CH 30V 4.3A 1212-8
Vishay Siliconix
|
12,843 | 1.65000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.3A | 47mOhm @ 6.4A, 10V | 3V @ 250µA | 21nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
SI4599DY-T1-GE3
MOSFET N/P-CH 40V 6.8A 8SOIC
Vishay Siliconix
|
5,568 | 0.95000 | Active | N and P-Channel | Logic Level Gate | 40V | 6.8A, 5.8A | 35.5mOhm @ 5A, 10V | 3V @ 250µA | 20nC @ 10V | 640pF @ 20V | 3W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
PJX8805_R1_00001
30V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
8,790 | 0.44000 | Active | 2 P-Channel (Dual) | Standard | 30V | 500mA (Ta) | 390mOhm @ 500mA, 4.5V | 1.3V @ 250µA | 1.6nC @ 4.5V | 137pF @ 15V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
IAUC60N04S6L045HATMA1
IAUC60N04S6L045HATMA1
Infineon Technologies
|
3,484 | 1.71000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 60A (Tj) | 4.5mOhm @ 30A, 10V | 2V @ 13µA | 19nC @ 10V | 1136pF @ 25V | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-57 | Details |
|
ALD212902SAL
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Advanced Linear Devices Inc.
|
5,258 | 5.44500 | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
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