| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN3032LFDBQ-7
MOSFET 2N-CH 30V 6.2A U-DFN2020
Diodes Incorporated
|
15,031 | 0.60000 | Active | 2 N-Channel (Dual) | Standard | 30V | 6.2A | 30mOhm @ 5.8A, 10V | 2V @ 250µA | 10.6nC @ 10V | 500pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
NTLJD3183CZTAG
MOSFET N/P-CH 20V 6WDFN
onsemi
|
12,165 | 0.20000 | Obsolete | N and P-Channel | Logic Level Gate | 20V | 2.6A, 2.2A | 68mOhm @ 2A, 4.5V | 1V @ 250µA | 7nC @ 4.5V | 355pF @ 10V | 710mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | Details |
|
TSM6502CR RLG
MOSFET N/P-CH 60V 24A/18A 8PDFN
Taiwan Semiconductor Corporation
|
15,000 | 2.48000 | Active | N and P-Channel | Standard | 60V | 24A (Tc), 18A (Tc) | 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V | 2.5V @ 250µA | 10.3nC @ 4.5V, 9.5nC @ 4.5V | 1159pF @ 30V, 930pF @ 30V | 40W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | Details |
|
ALD114904SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
|
25 | 4.98000 | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
FCAB21490L1
MOSFET 2 N-CHANNEL 10SMD
Panasonic Electronic Components
|
280 | 1.33000 | Obsolete | 2 N-Channel (Dual) | Standard | - | - | - | 1.4V @ 1.11mA | 25nC @ 4V | 3570pF @ 10V | 3.5W (Ta) | 150°C | Surface Mount | 10-SMD, No Lead | 10-SMD | Details |
|
SI4501BDY-T1-GE3
MOSFET N/P-CH 30V/8V 8SOIC
Vishay Siliconix
|
4,942 | 0.66000 | Active | N and P-Channel, Common Drain | Logic Level Gate | 30V, 8V | 12A, 8A | 17mOhm @ 10A, 10V | 2V @ 250µA | 25nC @ 10V | 805pF @ 15V | 4.5W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMP4025LSDQ-13
MOSFET BVDSS: 31V~40V SO-8 T&R 2
Diodes Incorporated
|
1,925 | 0.63540 | Active | 2 P-Channel (Dual) | Standard | 40V | 5.8A (Ta) | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | 1640pF @ 20V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
SCH1402-S-TL-E
N-CHANNEL MOSFET
onsemi
|
310,000 | 0.09000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
ALD210802SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Advanced Linear Devices Inc.
|
6,913 | 6.08840 | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | Details |
|
ALD110804PCL
MOSFET 4N-CH 10.6V 16DIP
Advanced Linear Devices Inc.
|
8,239 | 5.68260 | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | Details |
|
NVMFD6H840NLWFT1G
T8 80V LL SO8FL DS
onsemi
|
4,022 | 1.41540 | Active | 2 N-Channel (Dual) | Standard | 80V | 14A (Ta), 74A (Tc) | 6.9mOhm @ 20A, 10V | 2V @ 96µA | 32nC @ 10V | 2002pF @ 40V | - | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
BSL308CH6327XTSA1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
Infineon Technologies
|
7,872 | 0.82000 | Active | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 2.3A, 2A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | Details |
|
CSD87355Q5D
MOSFET 2N-CH 30V 8LSON
Texas Instruments
|
4,517 | 2.88000 | Active | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | - | - | 1.9V @ 250µA | 13.7nC @ 4.5V | 1860pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) | Details |
|
APTM50HM75STG
MOSFET 4N-CH 500V 46A SP4
Microchip Technology
|
1 | 166.52000 | Active | 4 N-Channel (Half Bridge) | Standard | 500V | 46A | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | Details |
|
EPC2101
GAN TRANS ASYMMETRICAL HALF BRID
EPC
|
193 | 9.16000 | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
HUF7554S3S
HUF755453S - 75A, 80V, 0.010 OHM
Harris Corporation
|
839 | 1.38000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SSM6N48FU,LF
X34 PB-F SOT-363 S-MOS (LF) TRAN
Toshiba Semiconductor and Storage
|
2,028 | 0.08800 | Active | 2 N-Channel (Dual) | Standard | 30V | 100mA (Ta) | 3.2Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 15.1pF @ 3V | 300mW | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Details |
|
STS4DNF60L
MOSFET 2N-CH 60V 4A 8-SOIC
STMicroelectronics
|
3,754 | 2.41000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4A | 55mOhm @ 2A, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 1030pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
FDS6892A
POWER FIELD-EFFECT TRANSISTOR, 7
Fairchild Semiconductor
|
72,006 | 0.51000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 18mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1333pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SI1024X-T1-GE3
MOSFET 2N-CH 20V 0.485A SC89-6
Vishay Siliconix
|
5,398 | 0.58000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 485mA | 700mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89 (SOT-563F) | Details |
|
NTJD1155LT2G
MOSFET N/P-CH SC-88-6
onsemi
|
4,143 | 0.15900 | Active | N and P-Channel | Standard | 8V | - | 175mOhm @ 1.2A, 4.5V | 1V @ 250µA | - | - | 400mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | Details |
|
DMC2025UFDB-13
MOSFET BVDSS: 8V-24V U-DFN2020-6
Diodes Incorporated
|
4,865 | 0.12060 | Active | N and P-Channel Complementary | Standard | 20V | 6A (Ta), 3.5A (Ta) | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V | 1V @ 250µA, 1.4V @ 250µA | 12.3nC @ 10V, 15nC @ 8V | 486pF @ 10V, 642pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
PMDPB56XN,115
MOSFET 2N-CH 30V 3.1A HUSON6
NXP USA Inc.
|
54,000 | 0.21000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.1A | 73mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 2.9nC @ 4.5V | 170pF @ 15V | 510mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-HUSON (2x2) | Details |
|
RM4606S8
MOSFET N&P-CH 30V 6.5A /7A 8SOP
Rectron USA
|
2,308 | 0.11000 | Active | N and P-Channel | Standard | 30V | 6.5A (Ta), 7A (Ta) | 30mOhm @ 6A, 10V, 33mOhm @ 6.5A, 10V | 3V @ 250µA, 2.5V @ 250µA | 13nC @ 10V, 9.2nC @ 10V | 255pF @ 15V, 520pF @ 15V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | Details |
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