| Mfr Part # | Qty | Price | Product Status | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXA4I1200UC-TRL
IGBT 1200V 9A 45W TO252AA
IXYS
|
9,620 | 1.09820 | Active | PT | 1200 V | 9 A | - | 2.1V @ 15V, 3A | 45 W | 400µJ (on), 300µJ (off) | Standard | 12 nC | - | 600V, 3A, 330Ohm, 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | Details |
|
SGH40N60UFDTU
IGBT 600V 40A 160W TO3P
onsemi
|
117,929 | 2.15280 | Obsolete | - | 600 V | 40 A | 160 A | 2.6V @ 15V, 20A | 160 W | 160µJ (on), 200µJ (off) | Standard | 97 nC | 15ns/65ns | 300V, 20A, 10Ohm, 15V | 60 ns | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | Details |
|
IKW75N65SS5XKSA1
INDUSTRY 14
Infineon Technologies
|
7,409 | 16.14000 | Active | Trench Field Stop | 650 V | 80 A | 300 A | 1.7V @ 15V, 75A | 395 W | 450µJ (on), 750µJ (off) | Standard | 164 nC | 22ns/145ns | 400V, 75A, 5.6Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | Details |
|
AUIRGDC0250
IGBT 1200V 141A 543W TO-220
Infineon Technologies
|
1,151 | 11.42000 | Not For New Designs | - | 1200 V | 141 A | 99 A | 1.57V @ 15V, 33A | 543 W | 15mJ (off) | Standard | 227 nC | -/485ns | 600V, 33A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SUPER-220™ (TO-273AA) | Details |
|
IKFW50N65EH5XKSA1
IKFW50N65EH5XKSA1
Infineon Technologies
|
229 | 7.14000 | Active | Trench Field Stop | 650 V | 59 A | 160 A | 2.1V @ 15V, 40A | 124 W | 1.2mJ (on), 400µJ (off) | Standard | 95 nC | 20ns/138ns | 400V, 40A, 15.1Ohm, 15V | 52 ns | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-HSIP247-3-2 | Details |
|
FGPF4565
INSULATED GATE BIPOLAR TRANSISTO
Fairchild Semiconductor
|
1,159 | 1.11000 | Active | Trench Field Stop | 650 V | - | 170 A | 1.88V @ 15V, 30A | 30 W | - | Standard | 40.3 nC | 11.2ns/40.8ns | 400V, 30A, 5Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | Details |
|
IXXH60N65C4
IGBT 650V 118A 455W TO247AD
IXYS
|
1,986 | 6.65230 | Active | PT | 650 V | 118 A | 240 A | 2.2V @ 15V, 60A | 455 W | 3.2mJ (on), 830µJ (off) | Standard | 94 nC | 37ns/133ns | 400V, 60A, 5Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXXH) | Details |
|
AFGHL75T65SQDT
650V/75A FS4 IGBT TO247 L
onsemi
|
1,588 | 6.50000 | Active | Trench Field Stop | 650 V | 80 A | 300 A | 2.1V @ 15V, 75A | 375 W | 2.12mJ (on), 1.14mJ (off) | Standard | 136 nC | 24ns/106ns | 400V, 75A, 4.7Ohm, 15V | 75 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
AIKQ120N60CTXKSA1
IGBT TRENCH/FS 600V 160A TO247-3
Infineon Technologies
|
422 | 14.02000 | Active | Trench Field Stop | 600 V | 160 A | 480 A | 2V @ 15V, 120A | 833 W | 4.1mJ (on), 2.8mJ (off) | Standard | 772 nC | 33ns/310ns | 400V, 120A, 3Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-46 | Details |
|
SGW50N60HSFKSA1
IGBT 600V 100A 416W TO247-3
Infineon Technologies
|
2,105 | 2.90000 | Obsolete | NPT | 600 V | 100 A | 150 A | 3.15V @ 15V, 50A | 416 W | 1.96mJ | Standard | 179 nC | 47ns/310ns | 400V, 50A, 6.8Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3-1 | Details |
|
NGTG35N65FL2WG
IGBT FIELD STOP 650V 70A TO247-3
onsemi
|
102 | 3.71000 | Obsolete | Field Stop | 650 V | 70 A | 120 A | 2V @ 15V, 35A | 300 W | 840µJ (on), 280µJ (off) | Standard | 125 nC | 72ns/132ns | 400V, 35A, 10Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | Details |
|
IKB20N60TATMA1
IGBT 600V 40A 166W TO263-3
Infineon Technologies
|
3,770 | 3.40000 | Active | Trench Field Stop | 600 V | 40 A | 60 A | 2.05V @ 15V, 20A | 166 W | 770µJ | Standard | 120 nC | 18ns/199ns | 400V, 20A, 12Ohm, 15V | 41 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | Details |
|
IRGS4610DPBF
IGBT 600V 16A 77W D2PAK
Infineon Technologies
|
350 | 0.99000 | Obsolete | - | 600 V | 16 A | 18 A | 2V @ 15V, 6A | 77 W | 56µJ (on), 122µJ (off) | Standard | 13 nC | 27ns/75ns | 400V, 6A, 47Ohm, 15V | 74 ns | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Details |
|
APT75GN60BG
IGBT 600V 155A 536W TO247
Microchip Technology
|
8,702 | 7.03840 | Active | Trench Field Stop | 600 V | 155 A | 225 A | 1.85V @ 15V, 75A | 536 W | 2500µJ (on), 2140µJ (off) | Standard | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | Details |
|
STGP100N30
IGBT 330V 90A 250W TO220
STMicroelectronics
|
849 | 6.10000 | Obsolete | - | 330 V | 90 A | - | 2.5V @ 15V, 50A | 250 W | - | Standard | - | -/134ns | 180V, 25A, 10Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | Details |
|
STGD4M65DF2
TRENCH GATE FIELD-STOP IGBT, M S
STMicroelectronics
|
7,098 | 1.24000 | Active | Trench Field Stop | 650 V | 8 A | 16 A | 2.1V @ 15V, 4A | 68 W | 40µJ (on), 136µJ (off) | Standard | 15.2 nC | 12ns/86ns | 400V, 4A, 47Ohm, 15V | 133 ns | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Details |
|
IXYH40N65B3D1
IGBT
IXYS
|
2,051 | 5.99620 | Active | - | 650 V | 86 A | 195 A | 2V @ 15V, 40A | 300 W | 800µJ (on), 1.25mJ (off) | Standard | 68 nC | 20ns/140ns | 400V, 30A, 10Ohm, 15V | 37 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | Details |
|
IXGK82N120A3
IGBT 1200V 260A 1250W TO264
IXYS
|
6,869 | 24.41640 | Active | PT | 1200 V | 260 A | 580 A | 2.05V @ 15V, 82A | 1250 W | 5.5mJ (on), 12.5mJ (off) | Standard | 340 nC | 34ns/265ns | 600V, 80A, 2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 (IXGK) | Details |
|
IKW50N65RH5XKSA1
INDUSTRY 14
Infineon Technologies
|
7,010 | 8.61000 | Active | Trench Field Stop | 650 V | 80 A | 200 A | 2.1V @ 15V, 50A | 305 W | 230µJ (on), 180µJ (off) | Standard | 120 nC | 22ns/180ns | 400V, 25A, 12Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | Details |
|
STGW30H60DFB
IGBT 600V 60A 260W TO247
STMicroelectronics
|
1,308 | 3.67000 | Active | Trench Field Stop | 600 V | 60 A | 120 A | 2V @ 15V, 30A | 260 W | 383µJ (on), 293µJ (off) | Standard | 149 nC | 37ns/146ns | 400V, 30A, 10Ohm, 15V | 53 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | Details |
|
IGTH20N40AD
N CHANNEL IGBT FOR SWITCHING APP
Harris Corporation
|
444 | 3.10000 | Active | - | 400 V | 20 A | - | - | - | - | Standard | - | - | - | - | - | Through Hole | TO-218-3 Isolated Tab, TO-218AC | TO-218 Isolated | Details |
|
IXGQ85N33PCD1
IGBT 330V 85A 150W TO3P
IXYS
|
1,624 | 6.66000 | Active | - | 330 V | 85 A | - | 3V @ 15V, 100A | 150 W | - | Standard | 80 nC | - | - | 250 ns | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | Details |
|
STGYA120M65DF2
TRENCH GATE FIELD-STOP IGBT, M S
STMicroelectronics
|
9,923 | 15.67000 | Active | NPT, Trench Field Stop | 650 V | 160 A | 360 A | 1.95V @ 15V, 120A | 625 W | 1.8mJ (on), 4.41mJ (off) | Standard | 420 nC | 66ns/185ns | 400V, 120A, 4.7Ohm, 15V | 202 ns | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 Exposed Pad | MAX247™ | Details |
|
NGB8207BNT4G
INSULATED GATE BIPOLAR TRANSISTO
onsemi
|
800 | 0.62000 | Obsolete | - | 365 V | 20 A | 50 A | 2.6V @ 4V, 20A | 165 W | - | Logic | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Details |
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