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TPD3215M

In Stock: 16
TPD3215M - Transphorm - Transistors - FETs, MOSFETs - Arrays
REF: TPD3215M Transphorm
TPD3215M

Transphorm

GANFET 2N-CH 600V 70A MODULE

TPD3215M is a Transistors - FETs, MOSFETs - Arrays manufactured by Transphorm. GANFET 2N-CH 600V 70A MODULE. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case Module, power - max 470W.

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In Stock: 16

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V
Power - Max470W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseModule
Supplier Device PackageModule

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