Name: TPC8212-H(TE12LQ,M
Brand: Toshiba Semiconductor and Storage
SKU: TPC8212-H(TE12LQ,M
Availability: InStock

REF: TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A SOP8

TPC8212-H(TE12LQ,M is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. MOSFET 2N-CH 30V 6A SOP8. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-SOIC (0.173", 4.40mm Width), power - max 450mW.

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In Stock: 9,177

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A
Rds On (Max) @ Id, Vgs	21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 10V
Power - Max	450mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP (5.5x6.0)