SSM6N951L,EFF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Arrays
REF: SSM6N951L,EFF Toshiba Semiconductor and Storage
SSM6N951L,EFF

Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET RDSON: 4.4MO

SSM6N951L,EFF is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. SMALL SIGNAL MOSFET RDSON: 4.4MO. Key specifications: mounting type Surface Mount, package / case 6-SMD, No Lead.

In Stock: 9,405

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs5.1mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-SMD, No Lead
Supplier Device Package6-TCSPA (2.14x1.67)

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