SSM6N35FE,LM - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Arrays
REF: SSM6N35FE,LM Toshiba Semiconductor and Storage
SSM6N35FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.18A ES6

SSM6N35FE,LM is a Transistors - FETs, MOSFETs - Arrays manufactured by Toshiba Semiconductor and Storage. MOSFET 2N-CH 20V 0.18A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, power - max 150mW.

In Stock: 3,559

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA
Rds On (Max) @ Id, Vgs3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 3V
Power - Max150mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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