TSM250NB06LDCR RLG

In Stock: 3,683
TSM250NB06LDCR RLG - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Arrays
REF: TSM250NB06LDCR RLG Taiwan Semiconductor Corporation
TSM250NB06LDCR RLG

Taiwan Semiconductor Corporation

DUAL N-CHANNEL POWER MOSFET 60V,

TSM250NB06LDCR RLG is a Transistors - FETs, MOSFETs - Arrays manufactured by Taiwan Semiconductor Corporation. DUAL N-CHANNEL POWER MOSFET 60V,. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2W (Ta), 48W (Tc).

In Stock: 3,683

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1314pF @ 30V
Power - Max2W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

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