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UPA1759G-E1-AT

In Stock: 1,986
UPA1759G-E1-AT - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays
REF: UPA1759G-E1-AT Renesas Electronics America Inc
UPA1759G-E1-AT

Renesas Electronics America Inc

N-CHANNEL POWER MOSFET

UPA1759G-E1-AT is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, package / case 8-SOIC (0.173", 4.40mm Width), power - max 2W.

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In Stock: 1,986

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5A
Rds On (Max) @ Id, Vgs150mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 10V
Power - Max2W
Operating Temperature-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-PSOP

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