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RJM0603JSC-00#13

In Stock: 6,031
RJM0603JSC-00#13 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays
REF: RJM0603JSC-00#13 Renesas Electronics America Inc
RJM0603JSC-00#13

Renesas Electronics America Inc

MOSFET 3N/3P-CH 60V 20A HSOP

RJM0603JSC-00#13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. MOSFET 3N/3P-CH 60V 20A HSOP. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 20-SOIC (0.433", 11.00mm Width) Exposed Pad, power - max 54W.

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In Stock: 6,031

Specifications

14 parameters
Product StatusObsolete
FET Type3 N and 3 P-Channel (3-Phase Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
Power - Max54W
Operating Temperature175°C
Mounting TypeSurface Mount
Package / Case20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package20-HSOP

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