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RJK0222DNS-00#J5

In Stock: 340,000
RJK0222DNS-00#J5 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays
REF: RJK0222DNS-00#J5 Renesas Electronics America Inc
RJK0222DNS-00#J5

Renesas Electronics America Inc

POWER FIELD-EFFECT TRANSISTOR

RJK0222DNS-00#J5 is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-WDFN Exposed Pad, power - max 8W, 10W.

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In Stock: 340,000

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C14A, 16A
Rds On (Max) @ Id, Vgs9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 10V
Power - Max8W, 10W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-DFN (5x6)

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