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NP29N06QDK-E1-AY

In Stock: 8,103
NP29N06QDK-E1-AY - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays
REF: NP29N06QDK-E1-AY Renesas Electronics America Inc
NP29N06QDK-E1-AY

Renesas Electronics America Inc

ABU / MOSFET

NP29N06QDK-E1-AY is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. ABU / MOSFET. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case 8-PowerLDFN, power - max 1W (Ta), 44W (Tc).

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In Stock: 8,103

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
Power - Max1W (Ta), 44W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Package / Case8-PowerLDFN
Supplier Device Package8-HSON (5x5.4)

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