HAT2210RWS-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Arrays
REF: HAT2210RWS-E Renesas Electronics America Inc
HAT2210RWS-E

Renesas Electronics America Inc

MOSFET N-PAK 8SOP

HAT2210RWS-E is a Transistors - FETs, MOSFETs - Arrays manufactured by Renesas Electronics America Inc. MOSFET N-PAK 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.5W (Ta).

In Stock: 4,294

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual), Schottky
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 10V, 1330pF @ 10V
Power - Max1.5W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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