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PJT7812_R1_00001

In Stock: 2,499
PJT7812_R1_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJT7812_R1_00001 Panjit International Inc.
PJT7812_R1_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

PJT7812_R1_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 30V N-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 350mW (Ta).

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In Stock: 2,499

Specifications

14 parameters
Product StatusNot For New Designs
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.87nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds34pF @ 15V
Power - Max350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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