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PJT7601_R1_00001

In Stock: 3,982
PJT7601_R1_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJT7601_R1_00001 Panjit International Inc.
PJT7601_R1_00001

Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

PJT7601_R1_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 20V COMPLEMENTARY ENHANCEMENT MO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 350mW (Ta).

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In Stock: 3,982

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureLogic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds67pF @ 10V, 38pF @ 10V
Power - Max350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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