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PJS6601_S2_00001

In Stock: 5,368
PJS6601_S2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJS6601_S2_00001 Panjit International Inc.
PJS6601_S2_00001

Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

PJS6601_S2_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 20V COMPLEMENTARY ENHANCEMENT MO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6, power - max 1.25W (Ta).

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In Stock: 5,368

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V, 416pF @ 10V
Power - Max1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

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