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PJQ5866A_R2_00001

In Stock: 8,437
PJQ5866A_R2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJQ5866A_R2_00001 Panjit International Inc.
PJQ5866A_R2_00001

Panjit International Inc.

60V DUAL N-CHANNEL ENHANCEMENT M

PJQ5866A_R2_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 60V DUAL N-CHANNEL ENHANCEMENT M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 1.7W (Ta), 56W (Tc).

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In Stock: 8,437

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1574pF @ 25V
Power - Max1.7W (Ta), 56W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackageDFN5060B-8

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