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PJQ5606_R2_00001

In Stock: 5,720
PJQ5606_R2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJQ5606_R2_00001 Panjit International Inc.
PJQ5606_R2_00001

Panjit International Inc.

30V COMPLEMENTARY ENHANCEMENT MO

PJQ5606_R2_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 30V COMPLEMENTARY ENHANCEMENT MO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 1.7W (Ta), 21W (Tc).

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In Stock: 5,720

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds429pF @ 25V, 846pF @ 15V
Power - Max1.7W (Ta), 21W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackageDFN5060B-8

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