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PJQ4602_R1_00001

In Stock: 8,358
PJQ4602_R1_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PJQ4602_R1_00001 Panjit International Inc.
PJQ4602_R1_00001

Panjit International Inc.

30V COMPLEMENTARY ENHANCEMENT MO

PJQ4602_R1_00001 is a Transistors - FETs, MOSFETs - Arrays manufactured by Panjit International Inc.. 30V COMPLEMENTARY ENHANCEMENT MO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 2W (Ta), 17.8W (Tc).

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In Stock: 8,358

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds343pF @ 15V, 870pF @ 15V
Power - Max2W (Ta), 17.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device PackageDFN3030B-8

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