FDS6900AS-G - onsemi - Transistors - FETs, MOSFETs - Arrays
REF: FDS6900AS-G onsemi
FDS6900AS-G

onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

FDS6900AS-G is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 900mW (Ta).

In Stock: 9,647

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.9A, 8.2A
Rds On (Max) @ Id, Vgs27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
Power - Max900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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