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FDG6303N_G

In Stock: 2,075
FDG6303N_G - onsemi - Transistors - FETs, MOSFETs - Arrays
REF: FDG6303N_G onsemi
FDG6303N_G

onsemi

INTEGRATED CIRCUIT

FDG6303N_G is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. INTEGRATED CIRCUIT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 300mW.

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In Stock: 2,075

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C500mA
Rds On (Max) @ Id, Vgs450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)

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