FDD3510H - onsemi - Transistors - FETs, MOSFETs - Arrays
REF: FDD3510H onsemi
FDD3510H

onsemi

MOSFET N/P-CH 80V 4.3/2.8A TO252

FDD3510H is a Transistors - FETs, MOSFETs - Arrays manufactured by onsemi. MOSFET N/P-CH 80V 4.3/2.8A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-5, DPak (4 Leads + Tab), TO-252AD, power - max 1.3W.

In Stock: 2,911

Specifications

14 parameters
Product StatusObsolete
FET TypeN and P-Channel, Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C4.3A, 2.8A
Rds On (Max) @ Id, Vgs80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 40V
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device PackageTO-252 (DPAK)

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