PMWD19UN,518 - NXP USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMWD19UN,518 NXP USA Inc.
PMWD19UN,518

NXP USA Inc.

MOSFET 2N-CH 30V 5.6A 8TSSOP

PMWD19UN,518 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2N-CH 30V 5.6A 8TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 2.3W.

In Stock: 2,425

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.6A
Rds On (Max) @ Id, Vgs23mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1478pF @ 10V
Power - Max2.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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