PMGD8000LN,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMGD8000LN,115 NXP USA Inc.
PMGD8000LN,115

NXP USA Inc.

MOSFET 2N-CH 30V 0.125A 6TSSOP

PMGD8000LN,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2N-CH 30V 0.125A 6TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 200mW.

In Stock: 9,118

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C125mA
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 5V
Power - Max200mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device Package6-TSSOP

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