PMDPB95XNE,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMDPB95XNE,115 NXP USA Inc.
PMDPB95XNE,115

NXP USA Inc.

MOSFET 2N-CH 30V 2.4A HUSON6

PMDPB95XNE,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2N-CH 30V 2.4A HUSON6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 475mW.

In Stock: 309,000

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.4A
Rds On (Max) @ Id, Vgs120mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds143pF @ 15V
Power - Max475mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Need a Quote for PMDPB95XNE,115?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →