PMDPB65UP,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMDPB65UP,115 NXP USA Inc.
PMDPB65UP,115

NXP USA Inc.

MOSFET 2P-CH 20V 3.5A SOT1118

PMDPB65UP,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2P-CH 20V 3.5A SOT1118. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 520mW.

In Stock: 1,820

Specifications

14 parameters
Product StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.5A
Rds On (Max) @ Id, Vgs70mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 10V
Power - Max520mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Need a Quote for PMDPB65UP,115?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →