Name: PMDPB38UNE,115
Brand: NXP USA Inc.
SKU: PMDPB38UNE,115
Price: 0.08 USD
Availability: InStock

REF: PMDPB38UNE,115 NXP USA Inc.

PMDPB38UNE,115

MOSFET 2N-CH 20V 4A HUSON6

PMDPB38UNE,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2N-CH 20V 4A HUSON6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 510mW.

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In Stock: 77,975

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A
Rds On (Max) @ Id, Vgs	46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	268pF @ 10V
Power - Max	510mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	6-HUSON (2x2)