PMDPB28UN,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMDPB28UN,115 NXP USA Inc.
PMDPB28UN,115

NXP USA Inc.

MOSFET 2N-CH 20V 4.6A HUSON6

PMDPB28UN,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by NXP USA Inc.. MOSFET 2N-CH 20V 4.6A HUSON6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 510mW.

In Stock: 310,680

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.6A
Rds On (Max) @ Id, Vgs37mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds265pF @ 10V
Power - Max510mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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