PMDPB30XN,115 - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PMDPB30XN,115 Nexperia USA Inc.
PMDPB30XN,115

Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

PMDPB30XN,115 is a Transistors - FETs, MOSFETs - Arrays manufactured by Nexperia USA Inc.. MOSFET 2N-CH 20V 4A 6HUSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UFDFN Exposed Pad, power - max 490mW.

In Stock: 6,178

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 10V
Power - Max490mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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