PHKD3NQ10T,518 - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Arrays
REF: PHKD3NQ10T,518 Nexperia USA Inc.
PHKD3NQ10T,518

Nexperia USA Inc.

MOSFET 2N-CH 100V 3A 8SOIC

PHKD3NQ10T,518 is a Transistors - FETs, MOSFETs - Arrays manufactured by Nexperia USA Inc.. MOSFET 2N-CH 100V 3A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.

In Stock: 7,932

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs90mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds633pF @ 20V
Power - Max2W
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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