JAN2N7334 - Microsemi Corporation - Transistors - FETs, MOSFETs - Arrays
REF: JAN2N7334 Microsemi Corporation
JAN2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

JAN2N7334 is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 4N-CH 100V 1A MO-036AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case 14-DIP (0.300", 7.62mm), power - max 1.4W.

In Stock: 5,219

Specifications

14 parameters
Product StatusActive
FET Type4 N-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A
Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case14-DIP (0.300", 7.62mm)
Supplier Device PackageMO-036AB

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