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APTM120H57FT3G

In Stock: 8,750
APTM120H57FT3G - Microsemi Corporation - Transistors - FETs, MOSFETs - Arrays
REF: APTM120H57FT3G Microsemi Corporation
APTM120H57FT3G

Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP3

APTM120H57FT3G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 4N-CH 1200V 17A SP3. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP3, power - max 390W.

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In Stock: 8,750

Specifications

14 parameters
Product StatusObsolete
FET Type4 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C17A
Rds On (Max) @ Id, Vgs684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5155pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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